The influence of Al2o3 doping on ZnO thin films were prepared on p-type Si. Substrates by q-switch second harmonic Nd:Yag laser deposition technique with wavelength of (532) nm and laser fluence energy density 0.6 j/cm2 from a Zno target mixed with Al2O3 of(0-5) wt.% and the films deposited at temperature 200 0c)
المؤتمر العلمي التخصصي الحادي والعشرين تحت شعار الفيزياء بوابة التقدم العلمي
م.م.نجوان حسين نعمان د.علي احمد يوسف
Morphological and structure of nanostructure Zno/p-Si thin films obtained by pulsed laser deposition
